PLASMOfab aims to develop the underlined integration technology and standardize the end-to-end fabrication process that will bringmeaningfulplasmonic functions, supported by CMOS compatible photonics and electronics closer to large-scale manufacturing. PLASMOfab PIC technology will be self-validated by using its own technological advancements co-integrated with supporting electronics and functional peripherals in wafer scale CMOS lines to demonstrate low-cost fabrication of predominant functional modules in the ever growing areas ofdata communications (μm-scale 100 Gb/s serial transmitter) and bio-sensing (10-9LoD, surface coverages of e few pg/mm² multi-channel plasmonic sensor), clearly outperforming their state-of-the-art counterparts.


OBJECTIVE 1: ADVANCEMENT OF CMOS-COMPATIBLE INTEGRATED PLASMONICS
Establish a CMOS-compatible integration process for the development of plasmonic structures in order to seamlessly integrate PLASMOfab modules and the associated fabrication technology, with commercially available silicon, silicon nitride and electronics foundries.


OBJECTIVE 2: ELEMENTARY PLASMONIC WAVEGUIDES INTEGRATED WITH CMOS-COMPATIBLE PHOTONICS
Generate a pool of elementary low-loss plasmonic waveguides on co-planar photonic (Siliconon-insulator (SOI), SiO2 and Si3N4) substrates based on CMOS-compatible metals along with the necessary photonic-plasmonic interfaces, by developing the complete technology, fabrication and manufacturability roadmap.


OBJECTIVE 3: HIGH-PERFORMANCE FUNCTIONAL MODULES (MODULATOR & BIOSENSOR)
Demonstrate the advantages of PLASMOfab fabrication technology by using it to integrate and demonstrate application-specific photonic modules with superior performance.


OBJECTIVE 4: GENERATION OF EDA TOOLS
Lower the access barriers of the PLASMOfab platform by generating a process design kit (PDK) software library.


OBJECTIVE 5: VALIDATION OF PLASMOFAB'S PIC TECHNOLOGY ADVANTAGES IN THE DATA COMMUNICATION SECTOR
Evince the natural advantages of plasmonic PIC technology by harmonically co-integrating the plasmonic modulator with ultra high-speed driving electronics to realize a low power, low footprint 100 Gb/s NRZ transmitter prototype chip.


OBJECTIVE 6: VALIDATION OF PLASMOFAB'S PIC TECHNOLOGY ADVANTAGES IN THE BIOSENINSG SECTOR
Demonstrate concurrent detection of multiple inflamation biomarkers with sensitivity of sub nmol/L (surface coverages of a few pg/mm²) by combining the novel Si3N4 -based mutichannel sensor chip with high-speed surface functionalization techniques and microfluidics.


OBJECTIVE 7: VOLUME MANUFACTURING AND COST REDUCTION IN PLASMONIC-AUGMENTED PICS
Demonstrate volume manufacturing and cost reduction capabilities of the PLASMOfab PIC technology by elevating the fabrication focus from sample-scale development, to large scale CMOS-compatible integration.


OBJECTIVE 8: ACCESSION TO MULTI-PROJECT-WAFER PROJECTS AND SERVICES
Pave the way towards the establishment of a plasmonics/photonics integration service alliance and the generation of a fabless plasmonic/photonic eco-system that may be adopted by commercial silicon and silicon nitride foundry services